Diodes Inc DMN65D8LDW-7 IGBT Module

Manufacturer Part Number: DMN65D8LDW-7Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G6Pin Count: 6ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 0.84Additional Feature: HIGH RELIABILITYConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 60 VDrain Current-Max (Abs) (ID): 0.2 ADrain Current-Max (ID): 0.15 ADrain-source On Resistance-Max: 8 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.4 WSubcategory: FET General Purpose PowersSurface Mount: YESTerminal Finish: Matte Tin (Sn) - annealedTerminal Form: GULL WINGTerminal Position: DUALTime Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6