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Diodes Inc DRDNB26W-7,DRDNB26W-7 pictures,DRDNB26W-7 supplier,DRDNB26W-7 stock
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Datasheets:DRDzzzzWProduct Photos:SOT-363Other Drawings:SOT-363 Package TopSOT-363 Package Side 1SOT-363 Package Side 2PCN Design/Specification:Bond Wire 16/Sept/2008Standard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:NPN - Pre-Biased + DiodeCurrent - Collector (Ic) (Max):600mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):220Resistor - Emitter Base (R2) (Ohms):4.7kDC Current Gain (hFE) (Min) @ Ic, Vce:47 @ 50mA, 5VVce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:200MHzPower - Max:200mWMounting Type:Surface MountPackage / Case:6-TSSOP, SC-88, SOT-363Supplier Device Package:SOT-363Other Names:DRDNB26WDITR
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Datasheets:DRDzzzzWProduct Photos:SOT-363Other Drawings:SOT-363 Package TopSOT-363 Package Side 1SOT-363 Package Side 2PCN Design/Specification:Bond Wire 16/Sept/2008Standard Package:3,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:NPN - Pre-Biased + DiodeCurrent - Collector (Ic) (Max):600mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):220Resistor - Emitter Base (R2) (Ohms):4.7kDC Current Gain (hFE) (Min) @ Ic, Vce:47 @ 50mA, 5VVce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mACurrent - Collector Cutoff (Max):500nAFrequency - Transition:200MHzPower - Max:200mWMounting Type:Surface MountPackage / Case:6-TSSOP, SC-88, SOT-363Supplier Device Package:SOT-363Other Names:DRDNB26WDITR
Shunlongwei Inspected every DRDNB26W-7 before Ship, All DRDNB26W-7 with 6 months warranty.
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