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EPC EPC2012 IGBT Module

#EPC, #EPC2012, #IGBT_Module, #IGBT, EPC2012 Power Field-Effect Transistor, 3A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semicon

· Categories: IGBT Module
· Manufacturer: EPC
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 6986
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EPC2012 Specification

Sell EPC2012, #EPC #EPC2012 Stock, EPC2012 Power Field-Effect Transistor, 3A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-4; EPC2012, #IGBT_Module, #IGBT, #EPC2012
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/epc2012.html

Manufacturer Part Number: EPC2012Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: EFFICIENT POWER CONVERSION CORPPackage Description: UNCASED CHIP, R-XXUC-X4ECCN Code: EAR99Manufacturer: Efficient Power ConversionRisk Rank: 8.51Additional Feature: ULTRA LOW RESISTANCEConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 200 VDrain Current-Max (Abs) (ID): 3 ADrain Current-Max (ID): 3 ADrain-source On Resistance-Max: 0.1 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XXUC-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: UNCASED CHIPPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 15 ASubcategory: FET General Purpose PowerTerminal Form: UNSPECIFIEDTerminal Position: UNSPECIFIEDTime Power Field-Effect Transistor, 3A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-4

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