#FUJI, #ET127, #IGBT_Module, #IGBT, ET127 Power Bipolar Transistor, 100A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin; ET127
Manufacturer Part Number: ET127Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-PUFM-X2Manufacturer: Fuji Electric Co LtdRisk Rank: 5.82Case Connection: COLLECTORCollector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 450 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 100Fall Time-Max (tf): 3000 nsJESD-30 Code: R-PUFM-X2Number of Elements: 1Number of Terminals: 2Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation Ambient-Max: 770 WPower Dissipation-Max (Abs): 960 WQualification Status: Not QualifiedRise Time-Max (tr): 4000 nsSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICONTurn-off Time-Max (toff): 13000 nsTurn-on Time-Max (ton): 4000 ns Power Bipolar Transistor, 100A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin