#Fairchild Semiconductor, #FDC8884, #IGBT_Module, #IGBT, FDC8884 N-Channel Power Trench® MOSFET, 30 V, 6.5 A, 23 mΩ, 3000-REEL; FDC8884
Manufacturer Part Number: FDC8884Brand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-G6Manufacturer Package Code: 419BLECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.92Configuration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 8 ADrain Current-Max (ID): 6.5 ADrain-source On Resistance-Max: 0.023 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 25 pFJEDEC-95 Code: MO-193AAJESD-30 Code: R-PDSO-G6Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1.6 WSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTime N-Channel Power Trench® MOSFET, 30 V, 6.5 A, 23 mΩ, 3000-REEL