#Eupec, #FF1200R17KE3, #IGBT_Module, #IGBT, FF1200R17KE3 IGBT module FF1200R17KE3 1200A/1700V/IGBT/2U; FF1200R17KE3
FF1200R17KE3 Product Category: IGBT Modules Manufacturer: Infineon RoHS: No Configuration: Dual Collector- Emitter Voltage VCEO Max: 1700 V Collector-Emitter Saturation Voltage: 2 V Continuous Collector Current at 25 C: 1600 A Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 5.95 kW Package / Case: IHM130-10 Maximum Operating Temperature: + 125 C Brand: Infineon Technologies Height: 38 mm Length: 140 mm Maximum Gate Emitter Voltage: +/- 20 V Minimum Operating Temperature: - 40 C Mounting Style: SMD/SMT Factory Pack Quantity: 2 Width: 130 mm IGBT module FF1200R17KE3 1200A/1700V/IGBT/2U