Infineon FF150R12KE3G IGBT Module

FF150R12KE3G

Product Category: IGBT Modules

Manufacturer: Infineon

RoHS: No

Product: IGBT Silicon Modules

Configuration: Dual

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 225 A

Gate-Emitter Leakage Current: 400 nA

Pd - Power Dissipation: 780 W

Package / Case: 62 mm

Maximum Operating Temperature: + 125 C

Packaging: Tray

Brand: Infineon Technologies

Height: 30.5 mm

Length: 106.4 mm

Maximum Gate Emitter Voltage: +/- 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Factory Pack Quantity: 10

Width: 61.4 mm