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Product Category: | IGBT Modules |
Manufacturer: | Infineon |
RoHS: | No |
Product: | IGBT Silicon Modules |
Configuration: | Dual |
Collector- Emitter Voltage VCEO Max: | 1200 V |
Collector-Emitter Saturation Voltage: | 1.7 V |
Continuous Collector Current at 25 C: | 225 A |
Gate-Emitter Leakage Current: | 400 nA |
Pd - Power Dissipation: | 780 W |
Package / Case: | 62 mm |
Maximum Operating Temperature: | + 125 C |
Packaging: | Tray |
Brand: | Infineon Technologies |
Height: | 30.5 mm |
Length: | 106.4 mm |
Maximum Gate Emitter Voltage: | +/- 20 V |
Minimum Operating Temperature: | - 40 C |
Mounting Style: | Screw |
Factory Pack Quantity: | 10 |
Width: | 61.4 mm |