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FF150R12KE3G
Product Category: IGBT Modules
Manufacturer: Infineon
RoHS: No
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 225 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 780 W
Package / Case: 62 mm
Maximum Operating Temperature: + 125 C
Packaging: Tray
Brand: Infineon Technologies
Height: 30.5 mm
Length: 106.4 mm
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
Width: 61.4 mm



Shunlongwei Inspected every FF150R12KE3G before Ship, All FF150R12KE3G with 6 months warranty.
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