Infineon FF300R12KE3 IGBT Module

Infineon FF300R12KE3 is a 1200V IGBT (Insulated Gate Bipolar Transistor) module that combines low on-state resistance with high switching performance, designed for high-performance applications , industrial drives, wind and solar power systems, & transportation systems.

FF300R12KE3 module features six IGBTs and six free-wheeling diodes in half-bridge configuration. It has maximum current rating 300A & maximum voltage rating 1200V. The FF300R12KE3 includes integrated thermal sensors and a NTC temperature sensor for temperature monitoring and protection.

This power module has low switching losses and high thermal conductivity, & low module height, which enables high power density designs.

Infineon FF300R12KE3 has overcurrent protection, short-circuit protection, and temperature monitoring, which ensures reliable operation and protects the module from damage.

FF300R12KE3 Details

Manufacturer: Infineon

RoHS: YES

Configuration: Dual

Collector- Emitter Voltage VCEO Max: 1200 V

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 300 A

Gate-Emitter Leakage Current: 400 nA

Pd - Power Dissipation: 1450 W

Package / Case: IS5a ( 62 mm )-7

Maximum Operating Temperature: + 125 C

Height: 30.9 mm

Length: 106.4 mm

Maximum Gate Emitter Voltage: +/- 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: Screw

Factory Pack Quantity: 10

Width: 61.4 mm

IGBT Modules 1200V 300A DUAL