#EUPEC, #FF600R12KE3, #IGBT_Module, #IGBT, FF600R12KE3 Insulated Gate Bipolar Transistor, 850A I(C), 1200V V(BR)CES, N-Channel, MODULE-10; FF600R12KE3
Manufacturer Part Number: FF600R12KE3Pbfree Code: NoPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPackage Description: MODULE-10Pin Count: 10ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.57Case Connection: ISOLATEDCollector Current-Max (IC): 850 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X10Number of Elements: 2Number of Terminals: 10Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2800 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 850A I(C), 1200V V(BR)CES, N-Channel, MODULE-10