#MITSUBISHI, #FM100HY_9, #IGBT_Module, #IGBT, FM100HY-9 Power Field-Effect Transistor, 100A I(D), 450V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconduc
Manufacturer Part Number: FM100HY-9Part Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-PUFM-X5Manufacturer: Mitsubishi ElectricRisk Rank: 5.83Configuration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 450 VDrain Current-Max (ID): 100 ADrain-source On Resistance-Max: 0.09 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X5Number of Elements: 1Number of Terminals: 5Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 300 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 100A I(D), 450V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET