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MITSUBISHI FM15BF-6 New IGBT Module

#MITSUBISHI, #FM15BF_6, #IGBT_Module, #IGBT, FM15BF-6 Power Field-Effect Transistor, 15A I(D), 300V, 0.28ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconducto

· Categories: IGBT Module
· Manufacturer: MITSUBISHI
· Price: US$
· Date Code: 11+
. Available Qty: 55
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FM15BF-6 Specification

Sell FM15BF-6, #MITSUBISHI #FM15BF-6 New Stock, FM15BF-6 Power Field-Effect Transistor, 15A I(D), 300V, 0.28ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; FM15BF-6, #IGBT_Module, #IGBT, #FM15BF_6
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Manufacturer Part Number: FM15BF-6Part Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-PUFM-X12ECCN Code: EAR99Manufacturer: Mitsubishi ElectricRisk Rank: 5.84Configuration: COMPLEXDS Breakdown Voltage-Min: 300 VDrain Current-Max (ID): 15 ADrain-source On Resistance-Max: 0.28 ΩFET Technology: METAL-OXIDE semiconductorJESD-30 Code: R-PUFM-X12Number of Elements: 4Number of Terminals: 12Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 45 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 15A I(D), 300V, 0.28ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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