#MITSUBISHI, #FM15BF_6, #IGBT_Module, #IGBT, FM15BF-6 Power Field-Effect Transistor, 15A I(D), 300V, 0.28ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconducto
Manufacturer Part Number: FM15BF-6Part Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-PUFM-X12ECCN Code: EAR99Manufacturer: Mitsubishi ElectricRisk Rank: 5.84Configuration: COMPLEXDS Breakdown Voltage-Min: 300 VDrain Current-Max (ID): 15 ADrain-source On Resistance-Max: 0.28 ΩFET Technology: METAL-OXIDE semiconductorJESD-30 Code: R-PUFM-X12Number of Elements: 4Number of Terminals: 12Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 45 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 15A I(D), 300V, 0.28ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET