#MITSUBISHI, #FM15BF_9, #IGBT_Module, #IGBT, FM15BF-9 Power Field-Effect Transistor, 15A I(D), 450V, 0.7ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor
Manufacturer Part Number: FM15BF-9Part Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-PUFM-X12Manufacturer: Mitsubishi ElectricRisk Rank: 5.84Case Connection: ISOLATEDConfiguration: COMPLEXDS Breakdown Voltage-Min: 450 VDrain Current-Max (ID): 15 ADrain-source On Resistance-Max: 0.7 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X12Number of Elements: 4Number of Terminals: 12Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 45 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 15A I(D), 450V, 0.7ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET