#MITSUBISHI, #FM50DY_9, #IGBT_Module, #IGBT, FM50DY-9 Power Field-Effect Transistor, 50A I(D), 450V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor
Manufacturer Part Number: FM50DY-9Part Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPackage Description: FLANGE MOUNT, R-PUFM-X7Manufacturer: Mitsubishi ElectricRisk Rank: 5.83Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTORDS Breakdown Voltage-Min: 450 VDrain Current-Max (ID): 50 ADrain-source On Resistance-Max: 0.2 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X7Number of Elements: 2Number of Terminals: 7Operating Mode: DEPLETION MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 150 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 50A I(D), 450V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET