#PRX, #FM600TU_2A, #IGBT_Module, #IGBT, FM600TU-2A Power Field-Effect Transistor, 300A I(D), 100V, 0.0011ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semicon
Manufacturer Part Number: FM600TU-2APbfree Code: YesPart Life Cycle Code: TransferredIhs Manufacturer: Powerex INCPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-PUFM-X19Pin Count: 19ECCN Code: EAR99Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.34Case Connection: ISOLATEDConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORDS Breakdown Voltage-Min: 100 VDrain Current-Max (ID): 300 ADrain-source On Resistance-Max: 0.0011 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X19Number of Elements: 6Number of Terminals: 19Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1300 WPulsed Drain Current-Max (IDM): 600 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 300A I(D), 100V, 0.0011ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-19