#EUPEC, #FP10R12KE3, #IGBT_Module, #IGBT, FP10R12KE3 Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, MODULE-23; FP10R12KE3
Manufacturer Part Number: FP10R12KE3Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPackage Description: MODULE-23Pin Count: 23ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.03Case Connection: ISOLATEDCollector Current-Max (IC): 15 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X23Number of Elements: 7Number of Terminals: 23Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 55 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, MODULE-23