#EUPEC, #FP35R12KS4CG, #IGBT_Module, #IGBT, FP35R12KS4CG Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MODULE-35; FP35R12KS4CG
Manufacturer Part Number: FP35R12KS4CGRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPackage Description: MODULE-35Pin Count: 35Manufacturer: Infineon Technologies AGRisk Rank: 5.54Case Connection: ISOLATEDCollector Current-Max (IC): 40 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X35Number of Elements: 7Number of Terminals: 35Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 230 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MODULE-35