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Infineon FP75R12KT3 New IGBT Module

#Infineon, #FP75R12KT3, #IGBT_Module, #IGBT, Power Transistor IGBT Modules N-CH 1.2KV 105A

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$
· Date Code: 2022+
. Available Qty: 44
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FP75R12KT3 Specification

Sell FP75R12KT3, #Infineon #FP75R12KT3 New Stock, Power Transistor IGBT Modules N-CH 1.2KV 105A , #IGBT_Module, #IGBT, #FP75R12KT3
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The FP75R12KT3 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon. This module is part of the EconoPIM™3 series and features a fast trench/field-stop IGBT3 along with an emitter-controlled high-efficiency diode. It is designed for various applications and offers high-performance characteristics.

Key Specifications:

  • Configuration: Hex
  • Collector-Emitter Voltage (VCEO Max): 1200 V
  • Collector-Emitter Saturation Voltage: 2.15 V
  • Continuous Collector Current at 25°C: 105 A
  • Gate-Emitter Leakage Current: 400 nA
  • Maximum Operating Temperature: +125°C
  • Package / Case: Econo 3
  • Mounting Style: Screw
  • Pd - Power Dissipation: 355 W
  • Maximum Gate Emitter Voltage: +/- 20 V
  • Minimum Operating Temperature: -40°C
  • Factory Pack Quantity: 10
  • Product: IGBT Silicon Modules
  • Application: IGBT, Inverter
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