Fairchild Semiconductor FQT1N80TF_WS IGBT Module

Manufacturer Part Number: FQT1N80TF_WSBrand Name: ON SemiconductorRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-G4Manufacturer Package Code: MA04AECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 1.07Case Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 800 VDrain Current-Max (Abs) (ID): 0.2 ADrain Current-Max (ID): 0.0002 ADrain-source On Resistance-Max: 20 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 5 pFJESD-30 Code: R-PDSO-G4Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2.1 WSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTime N-Channel QFET® MOSFET 800V, 0.2A, 20Ω, SOT-223 4L, 16000-TAPE REEL