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FS150R12KE3
Product Category: IGBT Modules
Manufacturer: Infineon
RoHS: YES
Product: IGBT Silicon Modules
Configuration: Hex
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 205 A
Gate-Emitter Leakage Current: 400 nA
Pd - Power Dissipation: 700 W
Package / Case: EconoPACK
Maximum Operating Temperature: + 125 C
Packaging: Tray
Brand: Infineon Technologies
Height: 12 mm
Length: 35.6 mm
Maximum Gate Emitter Voltage: +/- 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
Width: 25.4 mm



Shunlongwei Inspected every FS150R12KE3 before Ship, All FS150R12KE3 with 6 months warranty.
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