#EUPEC, #FS75R12KT3G, #IGBT_Module, #IGBT, FS75R12KT3G IGBT Modules N-CH 1.2KV 100A ; FS75R12KT3G
FS75R12KT3G Manufacturer: Infineon Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: Hex Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.15 V Continuous Collector Current at 25 C: 100 A Gate-Emitter Leakage Current: 400 nA Maximum Operating Temperature: + 125 C Package / Case: Econo 3 Packaging: Bulk Brand: Infineon Technologies Maximum Gate Emitter Voltage: +/- 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw Pd - Power Dissipation: 455 W IGBT Modules N-CH 1.2KV 100A