Infineon FZ1200R16KF4 IGBT Module

Product Category: IGBT Modules

Manufacturer: Infineon

RoHS: No

Product: IGBT Silicon Modules

Configuration: Dual

Collector- Emitter Voltage VCEO Max: 1600 V

Collector-Emitter Saturation Voltage: 3.5 V

Continuous Collector Current at 25 C: 1200 A

Gate-Emitter Leakage Current: 400 nA

Pd - Power Dissipation: 7.8 kW

Package / Case: IHM130

Maximum Operating Temperature: + 125 C

Brand: Infineon Technologies

Height: 38 mm

Length: 140 mm

Maximum Gate Emitter Voltage: +/- 20 V

Minimum Operating Temperature: - 40 C

Mounting Style: SMD/SMT

Factory Pack Quantity: 2

Width: 130 mm

IGBT Modules 1600V 1200A SINGLE 1200A/1600V/IGBT/1U