#EUPEC, #FZ2400R12, #IGBT_Module, #IGBT, FZ2400R12 Insulated Gate Bipolar Transistor, 3460A I(C), 1200V V(BR)CES, N-Channel, MODULE-7; FZ2400R12
Manufacturer Part Number: FZ2400R12HP4Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.14Case Connection: ISOLATEDCollector Current-Max (IC): 3460 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 12500 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 3460A I(C), 1200V V(BR)CES, N-Channel, MODULE-7