#Diodes Inc, #FZT849TA, #IGBT_Module, #IGBT, FZT849TA Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,; FZT849TA
Manufacturer Part Number: FZT849TAPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G4ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: Diodes IncorporatedRisk Rank: 1.01Case Connection: COLLECTORCollector Current-Max (IC): 7 ACollector-Emitter Voltage-Max: 30 VConfiguration: SINGLEDC Current Gain-Min (hFE): 100JESD-30 Code: R-PDSO-G4JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPNPower Dissipation-Max (Abs): 3 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,