#IR, #GB35XF120K, #IGBT_Module, #IGBT, GB35XF120K Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, ECONO, SIXPACK-17; GB35XF120K
Manufacturer Part Number: GB35XF120KPart Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY SEMICONDUCTORSPackage Description: FLANGE MOUNT, R-XUFM-X17Pin Count: 17Manufacturer: Vishay SemiconductorsRisk Rank: 5.84Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X17Number of Elements: 6Number of Terminals: 17Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: MOTOR CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 645 nsTurn-on Time-Nom (ton): 85 ns Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, ECONO, SIXPACK-17