#IXYS, #GWM180_004X2_SL, #IGBT_Module, #IGBT, GWM180-004X2-SL Power Field-Effect Transistor, 180A I(D), 40V, 0.0025ohm, 6-Element, N-Channel, Silicon, Metal-oxide Sem
Manufacturer Part Number: GWM180-004X2-SLPbfree Code: YesPart Life Cycle Code: Lifetime BuyIhs Manufacturer: IXYS CORPECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 5.76Case Connection: ISOLATEDConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 40 VDrain Current-Max (Abs) (ID): 180 ADrain Current-Max (ID): 180 ADrain-source On Resistance-Max: 0.0025 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XDFP-F17Number of Elements: 6Number of Terminals: 17Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 175 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLATPACKPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime Power Field-Effect Transistor, 180A I(D), 40V, 0.0025ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,