#Infineon Technologies, #IKU10N60R, #IGBT_Module, #IGBT, IKU10N60R Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-251, GREEN, PLASTIC, IPAK-3; IKU10N6
Manufacturer Part Number: IKU10N60RPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPart Package Code: TO-251Package Description: IN-LINE, R-PSIP-T3Pin Count: 3Manufacturer: Infineon Technologies AGRisk Rank: 5.81Case Connection: COLLECTORCollector Current-Max (IC): 20 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 5.7 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-251JESD-30 Code: R-PSIP-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 150 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-251, GREEN, PLASTIC, IPAK-3