#IR, #IRFK2D250, #IGBT_Module, #IGBT, IRFK2D250 Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET; IRFK2D250
Manufacturer Part Number: IRFK2D250Part Life Cycle Code: ObsoleteIhs Manufacturer: THOMSON CONSUMER ELECTRONICSPackage Description: ,Manufacturer: Thomson Consumer ElectronicsRisk Rank: 5.83Drain Current-Max (Abs) (ID): 54 AFET Technology: METAL-OXIDE SEMICONDUCTORNumber of Elements: 1Operating Temperature-Max: 150 °CPower Dissipation-Max (Abs): 500 WSubcategory: FET General Purpose Power Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET