#International Rectifier, #IRG7PH35UD1MPBF, #IGBT_Module, #IGBT, IRG7PH35UD1MPBF Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel; IRG7PH35UD1MPBF
Manufacturer Part Number: IRG7PH35UD1MPBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.65Collector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 1200 VFall Time-Max (tf): 105 nsGate-Emitter Thr Voltage-Max: 6 VGate-Emitter Voltage-Max: 30 VOperating Temperature-Max: 150 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 179 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NO Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel