#International Rectifier, #IRG7PH35UDPBF, #IGBT_Module, #IGBT, IRG7PH35UDPBF Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKA
Manufacturer Part Number: IRG7PH35UDPBFRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: FLANGE MOUNT, R-PSFM-T3ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 1.4Case Connection: COLLECTORCollector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEFall Time-Max (tf): 105 nsGate-Emitter Thr Voltage-Max: 6 VGate-Emitter Voltage-Max: 30 VJEDEC-95 Code: TO-247ACJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 180 WQualification Status: Not QualifiedRise Time-Max (tr): 30 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3