#International Rectifier, #IRGP4266D_EPBF, #IGBT_Module, #IGBT, IRGP4266D-EPBF Insulated Gate Bipolar Transistor, 140A I(C), 650V V(BR)CES, N-Channel,; IRGP4266D-EPBF
Manufacturer Part Number: IRGP4266D-EPBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.7Collector Current-Max (IC): 140 ACollector-Emitter Voltage-Max: 650 VFall Time-Max (tf): 80 nsGate-Emitter Thr Voltage-Max: 7.7 VGate-Emitter Voltage-Max: 20 VOperating Temperature-Max: 175 °CPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 455 WRise Time-Max (tr): 90 nsSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTime Insulated Gate Bipolar Transistor, 140A I(C), 650V V(BR)CES, N-Channel,