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International Rectifier IRL6372PBF New IGBT Module

#International Rectifier, #IRL6372PBF, #IGBT_Module, #IGBT, IRL6372PBF Power Field-Effect Transistor, 8.1A I(D), 30V, 0.0179ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semicond

· Categories: IGBT Module
· Manufacturer: International Rectifier
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 297
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IRL6372PBF Specification

Sell IRL6372PBF, #International Rectifier #IRL6372PBF New Stock, IRL6372PBF Power Field-Effect Transistor, 8.1A I(D), 30V, 0.0179ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8; IRL6372PBF, #IGBT_Module, #IGBT, #IRL6372PBF
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/irl6372pbf.html

Manufacturer Part Number: IRL6372PBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: SMALL OUTLINE, R-PDSO-G8ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 5.31Additional Feature: HIGH RELIABILITYConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 8.1 ADrain Current-Max (ID): 8.1 ADrain-source On Resistance-Max: 0.0179 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: MS-012AAJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2 WPulsed Drain Current-Max (IDM): 65 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Power Field-Effect Transistor, 8.1A I(D), 30V, 0.0179ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

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