#IXYS, #IXBX55N300, #IGBT_Module, #IGBT, IXBX55N300 Insulated Gate Bipolar Transistor, 130A I(C), 3000V V(BR)CES, N-Channel, PLUS247, 3 PIN; IXBX55N300
Manufacturer Part Number: IXBX55N300Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 2.28Additional Feature: LOW CONDUCTION LOSSCase Connection: COLLECTORCollector Current-Max (IC): 130 ACollector-Emitter Voltage-Max: 3000 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 25 VJESD-30 Code: R-PSFM-T3JESD-609 Code: e1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 625 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 130A I(C), 3000V V(BR)CES, N-Channel, PLUS247, 3 PIN