IXYS IXDN55N120D1 IGBT Module

Manufacturer Part Number: IXDN55N120D1Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X4Pin Count: 4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.21Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 6.5 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 450 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Nickel (Ni)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MINIBLOC-4