IXYS IXFH26N50Q IGBT Module

Manufacturer Part Number: IXFH26N50QPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPart Package Code: TO-247ADPackage Description: PLASTIC PACKAGE-3Pin Count: 3ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 8.45Additional Feature: AVALANCHE RATEDAvalanche Energy Rating (Eas): 1500 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 500 VDrain Current-Max (Abs) (ID): 26 ADrain Current-Max (ID): 26 ADrain-source On Resistance-Max: 0.2 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-247ADJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 300 WPulsed Drain Current-Max (IDM): 104 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3