#IXYS, #IXFN64N60P, #IGBT_Module, #IGBT, IXFN64N60P Power Field-Effect Transistor, 50A I(D), 600V, 0.096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semicondu
Manufacturer Part Number: IXFN64N60PPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PUFM-X4Pin Count: 4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.29Additional Feature: UL RECOGNIZED, AVALANCHE RATEDAvalanche Energy Rating (Eas): 3500 mJCase Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 600 VDrain Current-Max (ID): 50 ADrain-source On Resistance-Max: 0.096 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 150 AQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Nickel (Ni)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 50A I(D), 600V, 0.096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4