#IXYS, #IXFX48N50Q, #IGBT_Module, #IGBT, IXFX48N50Q Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconduct
Manufacturer Part Number: IXFX48N50QPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: IXYS CORPPackage Description: IN-LINE, R-PSIP-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 8.45Additional Feature: AVALANCHE RATEDAvalanche Energy Rating (Eas): 2500 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 500 VDrain Current-Max (ID): 48 ADrain-source On Resistance-Max: 0.1 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PSIP-T3JESD-609 Code: e1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 192 AQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN