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IXYS IXGH40N120B2D1 IGBT Module

#IXYS, #IXGH40N120B2D1, #IGBT_Module, #IGBT, IXGH40N120B2D1 Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN; IXGH40N120

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code:
. Available Qty: 735
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IXGH40N120B2D1 Specification

Sell IXGH40N120B2D1, #IXYS #IXGH40N120B2D1 Stock, IXGH40N120B2D1 Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN; IXGH40N120B2D1, #IGBT_Module, #IGBT, #IXGH40N120B2D1
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/ixgh40n120b2d1.html

Manufacturer Part Number: IXGH40N120B2D1Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-247Package Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.16Case Connection: COLLECTORCollector Current-Max (IC): 75 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEFall Time-Max (tf): 270 nsGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-247JESD-30 Code: R-PSFM-T3JESD-609 Code: e1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 380 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN

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