#IXYS, #IXGN200N60B3, #IGBT_Module, #IGBT, IXGN200N60B3 Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4; IXGN200N60B3
Manufacturer Part Number: IXGN200N60B3Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PUFM-X4Pin Count: 4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.24Additional Feature: UL RECOGNIZED, LOW CONDUCTION LOSSCase Connection: ISOLATEDCollector Current-Max (IC): 300 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 830 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Nickel (Ni)Terminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4