#IXYS, #IXSN80N60AU1, #IGBT_Module, #IGBT, IXSN80N60AU1 Insulated Gate Bipolar Transistor, 160A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4; IXSN80N60AU1
Manufacturer Part Number: IXSN80N60AU1Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: MINIBLOC-4Pin Count: 4Manufacturer: IXYS CorporationRisk Rank: 5.79Additional Feature: HIGH SPEEDCase Connection: ISOLATEDCollector Current-Max (IC): 160 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 7 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 500 WPower Dissipation-Max (Abs): 500 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 160A I(C), 600V V(BR)CES, N-Channel, MINIBLOC-4