IXYS IXTN21N100 IGBT Module

Manufacturer Part Number: IXTN21N100Part Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPart Package Code: SOT-227Package Description: SOT-227B, MINIBLOC-4Pin Count: 4ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: IXYS CorporationRisk Rank: 5.8Case Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 1000 VDrain Current-Max (Abs) (ID): 21 ADrain Current-Max (ID): 21 ADrain-source On Resistance-Max: 0.55 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 520 WPower Dissipation-Max (Abs): 520 WPulsed Drain Current-Max (IDM): 84 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 21A I(D), 1000V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4