#IXYS, #IXTP6N50D2, #IGBT_Module, #IGBT, IXTP6N50D2 Power Field-Effect Transistor, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer Part Number: IXTP6N50D2Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-220ABPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 2.28Additional Feature: UL RECOGNIZEDCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDrain-source On Resistance-Max: 0.5 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Mode: DEPLETION MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 300 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3