#IXYS, #IXUN350N10, #IGBT_Module, #IGBT, IXUN350N10 Power Field-Effect Transistor, 350A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semicon
Manufacturer Part Number: IXUN350N10Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: MINIBLOC-4Pin Count: 4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 5.84Additional Feature: HIGH RELIABILITYAvalanche Energy Rating (Eas): 5000 mJCase Connection: ISOLATEDConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (ID): 350 ADrain-source On Resistance-Max: 0.0025 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Power Field-Effect Transistor, 350A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4