#IXYS, #IXXN200N60B3, #IGBT_Module, #IGBT, IXXN200N60B3 Insulated Gate Bipolar Transistor, 280A I(C), 600V V(BR)CES,; IXXN200N60B3
Manufacturer Part Number: IXXN200N60B3Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPManufacturer: IXYS CorporationRisk Rank: 2.22Collector Current-Max (IC): 280 ACollector-Emitter Voltage-Max: 600 VGate-Emitter Voltage-Max: 20 VNumber of Elements: 1Operating Temperature-Max: 175 °CPower Dissipation-Max (Abs): 940 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 1.7 V Insulated Gate Bipolar Transistor, 280A I(C), 600V V(BR)CES,