#IXYS, #IXYH24N90C3, #IGBT_Module, #IGBT, IXYH24N90C3 Insulated Gate Bipolar Transistor, 46A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN; IXYH24N90C3
Manufacturer Part Number: IXYH24N90C3Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-247ADPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 5.65Additional Feature: AVALANCHE RATEDCase Connection: COLLECTORCollector Current-Max (IC): 46 ACollector-Emitter Voltage-Max: 900 VConfiguration: SINGLEGate-Emitter Thr Voltage-Max: 6 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-247ADJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 240 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 215 nsTurn-on Time-Nom (ton): 60 ns Insulated Gate Bipolar Transistor, 46A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN