#IXYS, #IXYH30N120C3, #IGBT_Module, #IGBT, IXYH30N120C3 Insulated Gate Bipolar Transistor, 66A I(C), 1200V V(BR)CES, N-Channel,; IXYH30N120C3
Manufacturer Part Number: IXYH30N120C3Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPManufacturer: IXYS CorporationRisk Rank: 2.13Collector Current-Max (IC): 66 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VOperating Temperature-Max: 150 °CPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 416 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NO Insulated Gate Bipolar Transistor, 66A I(C), 1200V V(BR)CES, N-Channel,