IXYS IXYN82N120C3H1 IGBT Module

Manufacturer Part Number: IXYN82N120C3H1Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PUFM-X4Pin Count: 4ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.18Additional Feature: AVALANCHE RATED, UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 105 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PUFM-X4Number of Elements: 1Number of Terminals: 4Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 500 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 295 nsTurn-on Time-Nom (ton): 119 ns Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, MINIBLOC-4