#Microsemi HI-REL [MIL], #JAN2N2484UB, #IGBT_Module, #IGBT, JAN2N2484UB Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC
Manufacturer Part Number: JAN2N2484UBPbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: SOTPackage Description: SMALL OUTLINE, R-CDSO-N3Pin Count: 3ECCN Code: EAR99HTS Code: 8541.21.00.95Manufacturer: Microsemi CorporationRisk Rank: 5.25Collector Current-Max (IC): 0.05 ACollector-Emitter Voltage-Max: 60 VConfiguration: SINGLEDC Current Gain-Min (hFE): 225JESD-30 Code: R-CDSO-N3JESD-609 Code: e0Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 200 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 0.36 WQualification Status: QualifiedReference Standard: MIL-19500/376Subcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: NO LEADTerminal Position: DUALTime Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3