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Microsemi HI-REL [MIL] JANTXV2N6987 New IGBT Module

#Microsemi HI-REL [MIL], #JANTXV2N6987, #IGBT_Module, #IGBT, JANTXV2N6987 Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, TO-116,; JANTXV2N6987

· Categories: IGBT Module
· Manufacturer: Microsemi HI-REL [MIL]
· Price: US$
· Date Code: Contains lead / RoHS non-compliant
. Available Qty: 1252
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JANTXV2N6987 Specification

Sell JANTXV2N6987, #Microsemi HI-REL [MIL] #JANTXV2N6987 New Stock, JANTXV2N6987 Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, TO-116,; JANTXV2N6987, #IGBT_Module, #IGBT, #JANTXV2N6987
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/jantxv2n6987.html

Manufacturer Part Number: JANTXV2N6987Pbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPart Package Code: DIPPackage Description: IN-LINE, R-XDIP-T14Pin Count: 14ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Microsemi CorporationRisk Rank: 5.22Collector Current-Max (IC): 0.6 ACollector-Emitter Voltage-Max: 60 VConfiguration: SEPARATE, 4 ELEMENTSDC Current Gain-Min (hFE): 50JEDEC-95 Code: TO-116JESD-30 Code: R-XDIP-T14JESD-609 Code: e0Number of Elements: 4Number of Terminals: 14Operating Temperature-Max: 200 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: PNPQualification Status: QualifiedReference Standard: MIL-19500/558DSubcategory: Other TransistorsSurface Mount: NOTerminal Finish: Tin/Lead (Sn/Pb)Terminal Form: THROUGH-HOLETerminal Position: DUALTime Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, TO-116,

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