#POWEREX, #KD221203, #IGBT_Module, #IGBT, KD221203 Power Bipolar Transistor, 30A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon; KD221203
Manufacturer Part Number: KD221203Part Life Cycle Code: ObsoleteIhs Manufacturer: Powerex INCPackage Description: FLANGE MOUNT, R-XUFM-X7Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.82Case Connection: ISOLATEDCollector Current-Max (IC): 30 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXDC Current Gain-Min (hFE): 100Fall Time-Max (tf): 3000 nsJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 300 WQualification Status: Not QualifiedRise Time-Max (tr): 2500 nsSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICONVCEsat-Max: 3 V Power Bipolar Transistor, 30A I(C), 1200V V(BR)CEO, 2-Element, NPN, Silicon