#POWEREX, #KD221K05HB, #IGBT_Module, #IGBT, KD221K05HB Power Bipolar Transistor, 50A I(C), 850V V(BR)CEO, 2-Element, NPN, Silicon; KD221K05HB
Manufacturer Part Number: KD221K05HBPart Life Cycle Code: ObsoleteIhs Manufacturer: Powerex INCPackage Description: FLANGE MOUNT, R-XUFM-X7Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.84Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 850 VConfiguration: COMPLEXDC Current Gain-Min (hFE): 750JESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 400 WQualification Status: Not QualifiedSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICONVCEsat-Max: 2.5 V Power Bipolar Transistor, 50A I(C), 850V V(BR)CEO, 2-Element, NPN, Silicon